The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 24, 2007
Wei Gao, Vancouver, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Yoshi Ono, Camas, WA (US);
Steven R. Droes, Camas, WA (US);
Wei Gao, Vancouver, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Yoshi Ono, Camas, WA (US);
Steven R. Droes, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of fabricating a grayscale mask includes preparing a silicon wafer; depositing a layer of SiNdirectly on the silicon wafer; implanting Hions into the silicon wafer to form a defect layer; depositing a first layer of SiONdirectly on the SiNlayer; depositing a layer of SRO directly on the first layer of SiON; patterning and etching the SRO layer to form a microlens array in the SRO layer; depositing a second layer of SiONon the SRO microlens array; CMP to planarize the second layer of SiON; bonding and cleaving the planarized SiONto a quartz plate to form a graymask reticle; etching to remove silicon from the bonded structure; etching to remove SiONand SiNfrom the bonded structure; and cleaning and drying the graymask reticle.