The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Sep. 02, 2005
Applicants:

Hongmei Zhang, San Jose, CA (US);

Richard E. Demaray, Portola Valley, CA (US);

Inventors:

Hongmei Zhang, San Jose, CA (US);

Richard E. Demaray, Portola Valley, CA (US);

Assignee:

SpringWorks, LLC, Minnetonka, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 9/00 (2006.01); C23C 14/34 (2006.01); B05D 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the BST layer.


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