The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Apr. 30, 2007
Delia R. Bearup, Petersburgh, NY (US);
Andrew S. Dalton, New Milford, CT (US);
James J. Demarest, Fishkill, NY (US);
Loren L. Hahn, Poughquag, NY (US);
Bruce J. Redder, Milton, NY (US);
Francis R. Wallingford, Wappingers Falls, NY (US);
Delia R. Bearup, Petersburgh, NY (US);
Andrew S. Dalton, New Milford, CT (US);
James J. Demarest, Fishkill, NY (US);
Loren L. Hahn, Poughquag, NY (US);
Bruce J. Redder, Milton, NY (US);
Francis R. Wallingford, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Non-destructive, below-surface defect rendering of an IC chip using image intensity analysis is disclosed. One method includes providing an IC chip delayered to a selected layer; determining a defect location below a surface of the selected layer using a first image of the IC chip obtained using an CPIT in a first mode; generating a second image of the IC chip with the CPIT in a second mode, the second image representing charged particle signal from the defect below the surface of the selected layer; and rendering the defect by comparing an image intensity of a reference portion of the second image not including the defect with the image intensity of a defective portion of the second image including the defect, wherein the reference portion and the defective portion are of structures expected to be substantially identical.