The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Feb. 28, 2007
Radu M. Secareanu, Phoenix, AZ (US);
Olin L. Hartin, Phoenix, AZ (US);
Emre Salman, Rochester, NY (US);
Radu M. Secareanu, Phoenix, AZ (US);
Olin L. Hartin, Phoenix, AZ (US);
Emre Salman, Rochester, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Apparatus and a method are provided for reducing noise in mixed-signal and digital circuits. One apparatus () includes a metal-oxide-semiconductor field-effect transistor (MOSFET) (). MOSFET () includes a doped substrate () with a source formed proximate a substrate tie () and a substrate tie () adjacent substrate (). A ground rail () is coupled to the source and substrate tie (), and a ground rail () is coupled to substrate tie (). Ground rails () and () are configured to be coupled to different ground networks (and). One method includes producing a model of a semiconductor device including a standard semiconductor cell (). The semiconductor cell is identified as a noise-sensitive or a noise-producing semiconductor cell (), and the semiconductor cell is replaced with a corresponding noise-aware semiconductor cell ().