The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
May. 18, 2005
Soren Andresen, Copenhagen, DK;
Andrew Steven Dzurak, Elizabeth Bay, AU;
Eric Gauja, Peakhurst, AU;
Sean Hearne, Co. Kildare, IE;
Toby Felix Hopf, North Melbourne, AU;
David Norman Jamieson, Eltham, AU;
Mladen Mitic, Ryde, AU;
Steven Prawer, Caulfield, AU;
Changyi Yang, Vermont, AU;
Soren Andresen, Copenhagen, DK;
Andrew Steven Dzurak, Elizabeth Bay, AU;
Eric Gauja, Peakhurst, AU;
Sean Hearne, Co. Kildare, IE;
Toby Felix Hopf, North Melbourne, AU;
David Norman Jamieson, Eltham, AU;
Mladen Mitic, Ryde, AU;
Steven Prawer, Caulfield, AU;
Changyi Yang, Vermont, AU;
Qucor Pty. Ltd., , AU;
Abstract
This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms () implanted in regions of a substrate () that are substantially intrinsic semiconductor. One or more doped surface regions () of the substrate () are metallized to form electrodes () and a counted number of dopant ions () are implanted in a region of the substantially intrinsic semiconductor.