The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Aug. 20, 2007
Kikuo Saka, Hyogo, JP;
Kikuo Saka, Hyogo, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A semiconductor device includes a power MOSFET including a trench formed on a surface of a semiconductor layer forming a drain; a gate electrode formed in the trench via a gate insulation film and made of poly-silicon; a channel diffusion layer formed at a surface side of the semiconductor layer shallower than the trench by neighboring the trench; and a source diffusion layer formed at a surface side of the channel diffusion layer by neighboring the trench; wherein a reverse impurity layer is provided at a bottom part side of the trench of the poly-silicon forming the gate electrode; and an impurity ion that is a conductive type opposite to the conductive type of an impurity ion provided in the poly-silicon at a surface side of the trench is provided in the reverse impurity layer.