The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Oct. 11, 2007
Yi-kai Wang, Hsinchu, TW;
Liang-ying Huang, Taichung County, TW;
Tarng-shiang HU, Hsinchu, TW;
Yu-yuan Shen, Yunlin County, TW;
Yi-Kai Wang, Hsinchu, TW;
Liang-Ying Huang, Taichung County, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Yu-Yuan Shen, Yunlin County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.