The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jan. 11, 2008
Tae Woo Lee, Seoul, KR;
Young Hun Byun, Gyeonggi-do, KR;
Yi Yeol Lyu, Daejeon-si, KR;
Sang Yoon Lee, Seoul, KR;
Bon Won Koo, Gyeoggi-do, KR;
Tae Woo Lee, Seoul, KR;
Young Hun Byun, Gyeonggi-do, KR;
Yi Yeol Lyu, Daejeon-si, KR;
Sang Yoon Lee, Seoul, KR;
Bon Won Koo, Gyeoggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.