The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Dec. 19, 2006
Johannes G. Bednorz, Wolfhausen, CH;
Eric A. Joseph, White Plains, NY (US);
Siegfried F. Karg, Adliswil, CH;
Chung H. Lam, Peekskill, NY (US);
Gerhard I. Meijer, Zurich, CH;
Alejandro G. Schrott, New York, NY (US);
Johannes G. Bednorz, Wolfhausen, CH;
Eric A. Joseph, White Plains, NY (US);
Siegfried F. Karg, Adliswil, CH;
Chung H. Lam, Peekskill, NY (US);
Gerhard I. Meijer, Zurich, CH;
Alejandro G. Schrott, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.