The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Dec. 20, 2004
Applicants:
Norikatsu Takaura, Tokyo, JP;
Motoyasu Terao, Hinode, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Kenzo Kurotsuchi, Kokubunji, JP;
Inventors:
Norikatsu Takaura, Tokyo, JP;
Motoyasu Terao, Hinode, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Kenzo Kurotsuchi, Kokubunji, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher. The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.