The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jun. 09, 2009
Won-joo Kim, Hwaseong-si, KR;
June-mo Koo, Seoul, KR;
Seung-hwan Song, Incheon, KR;
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Jong-jin Lee, Seongnam-si, KR;
Won-joo Kim, Hwaseong-si, KR;
June-mo Koo, Seoul, KR;
Seung-hwan Song, Incheon, KR;
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Jong-jin Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile