The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Nov. 26, 2008
Tae Kyung Won, Suwon, KR;
Soo Young Choi, Fremont, CA (US);
Dong Kil Yim, Sungnam, KR;
Jriyan Jerry Chen, Santa Clara, CA (US);
Beom Soo Park, San Jose, CA (US);
Tae Kyung Won, Suwon, KR;
Soo Young Choi, Fremont, CA (US);
Dong Kil Yim, Sungnam, KR;
Jriyan Jerry Chen, Santa Clara, CA (US);
Beom Soo Park, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.