The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jan. 10, 2007
Applicants:
Yukihiro Tsuji, Yokohama, JP;
Toshio Nomaguchi, Yokohama, JP;
Inventors:
Yukihiro Tsuji, Yokohama, JP;
Toshio Nomaguchi, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/469 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a semiconductor device, including: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.