The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jul. 23, 2007
Brian A. Winstead, Austin, TX (US);
Vishal P. Trivedi, Chandler, AZ (US);
Da Zhang, Fishkill, NY (US);
Brian A. Winstead, Austin, TX (US);
Vishal P. Trivedi, Chandler, AZ (US);
Da Zhang, Fishkill, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a semiconductor device is provided. The method includes forming a semiconductor layer. The method further includes forming a gate structure overlying the semiconductor layer. The method further includes forming a high-k sidewall spacer adjacent to the gate structure. The method further includes forming a recess in the semiconductor layer, the recess aligned to the high-k sidewall spacer. The method further includes forming an in-situ doped epitaxial material in the recess, the epitaxial material having a natural lattice constant different from a lattice constant of the semiconductor layer to create stress in a channel region of the semiconductor device.