The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Aug. 02, 2007
Hiroyuki Kamiyama, Saitama, JP;
Masaru Mukaikubo, Fujisawa, JP;
Hiroaki Inoue, Hidaka, JP;
Chiyuki Kitahara, Yokohama, JP;
Hiroyuki Kamiyama, Saitama, JP;
Masaru Mukaikubo, Fujisawa, JP;
Hiroaki Inoue, Hidaka, JP;
Chiyuki Kitahara, Yokohama, JP;
Opnext Japan, Inc., Kanagawa, JP;
Abstract
Some semiconductor lasers have an initial failure mode that is advanced as the amount of optical power therein, namely, the amount of optical output observed from the outside increases in almost independent of the temperature. The initial failure mode that is advanced as the amount of optical output increases is not sufficiently screened, so that the initial failure rate is somewhat higher than that of the semiconductor laser having the conventional active layer material. It is effective to introduce a test with large optical output at lower temperature than average operating temperature such as room temperature, during the manufacturing process. This helps to eliminate elements having the initial failure mode that is advanced as the amount optical output increases, thereby to extend the expected life of the laser diodes.