The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
May. 12, 2006
Han Ki Kim, Yongin, KR;
Myoung Soo Kim, Yongin, KR;
Myung Soo Huh, Suwon, KR;
Seok Heon Jeong, Yongin, KR;
Hee Cheol Kang, Yongin, KR;
Han Ki Kim, Yongin, KR;
Myoung Soo Kim, Yongin, KR;
Myung Soo Huh, Suwon, KR;
Seok Heon Jeong, Yongin, KR;
Hee Cheol Kang, Yongin, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.