The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jan. 12, 2007
Tomoji Kumano, Kitakyushu, JP;
Shyuichi Yamazaki, Futtsu, JP;
Osamu Tanaka, Kitakyushu, JP;
Nippon Steel Corporation, Tokyo, JP;
Nittetsu Plant Designing Corporation, Fukuoka, JP;
Abstract
The invention provides a method of producing a grain-oriented electrical steel sheet of the complete solid solution nitrided type that is good in glass film formation and excellent in magnetic properties, which method comprises: C: 0.025 to 0.09%, hot-rolling the steel slab containing Si: 2.5 to 4.0% and acid-soluble Al into a hot-rolled steel strip; controlling the rate at which N contained in the hot-rolled steel strip is precipitated as AlN to a precipitation rate of 20% or less; conducting hot-rolled strip annealing and cold rolling conducting decarburization-annealing combined with primary recrystallization by during the former part of the process in an atmosphere whose PHO/PHis 0.30 to 0.70 and then during the latter part thereof in an atmosphere whose PHO/PHis 0.20 or less, thereby making the circular equivalent average grain diameter of the primary recrystallization grains 7 μm to less than 18 μm; nitriding the strip as it travels in a mixed gas of hydrogen, nitrogen and ammonia; controlling the steel strip oxygen concentration before secondary recrystallization annealing calculated based on strip thickness of 0.30 mm (oxygen content: So) to 450 ppm to 700 ppm inclusive; applying a coat of annealing separator; and then conducting secondary recrystallization annealing in an atmosphere that, while the temperature at the hottest coil outer periphery point is between room temperature and 950° C., is controlled to a nitrogen atmosphere containing oxygen: 25 to 75% wherein the balance is hydrogen and PHO/PHis 0.01 to 0.15.