The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Sep. 18, 2008
Applicants:
Makoto Iwai, Kasugai, JP;
Shuhei Higashihara, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Inventors:
Makoto Iwai, Kasugai, JP;
Shuhei Higashihara, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Assignees:
NGK Insulators, Ltd., Nagoya, JP;
Osaka University, Suita, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.