The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

May. 30, 2008
Applicants:

SE Chun Park, Seoul, KR;

Jong Hyun Wang, Cheongju-si, KR;

Yu Jong Noh, Seoul, KR;

Inventors:

Se Chun Park, Seoul, KR;

Jong Hyun Wang, Cheongju-si, KR;

Yu Jong Noh, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A page buffer includes a first ground voltage supply unit for applying a ground voltage to first and second registers according to a level of a sense node, and a second ground voltage supply unit for applying the ground voltage to the first and second registers irrespective of a level of the sense node. A method of programming a non-volatile memory device includes storing a high-level data in a first node of a first register of a plurality of page buffers, precharging a sense node with a high level, resetting the data stored in the first node of the first register according to a voltage level of the sense node, precharging the sense node with a high level, storing external data in the first node according to a voltage level of the sense node, and performing a program operation according to the data stored in the first node.


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