The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 19, 2009
Eio Onodera, Ota, JP;
Eio Onodera, Ota, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
Provided is an amplifier device including a J-FET, a bipolar transistor, a first resistor and a second resistor. The amplifier device has a configuration in which a gate of the J-FET is connected to one end of an ECM and one end of the first resistor, a drain of the J-FET is connected to an input terminal of the bipolar transistor, a high-potential side of the bipolar transistor is connected to one end of a load resistor, the other end of the first resistor is grounded, a source of the J-FET and a low-potential side of the bipolar transistor are connected to one end of the second resistor, the other end of the second resistor is grounded, and an output voltage is drawn from the high-potential side of the bipolar transistor.