The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Apr. 20, 2005
Bernard Diem, Echirolles, FR;
Eugene Blanchet, Saint Egreve, FR;
Bishnu Gogoi, Scottsdale, AZ (US);
Commissariat a l'Energie Atomique, Paris, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
The invention relates to inter-level realignment after a stage of epitaxy on a face () of a substrate (), comprising the production of at least one initial guide mark () on the face of the substrate, this initial guide mark being designed so as to be transferred, during epitaxy, onto the surface of the epitaxied layer (). The initial guide mark () is produced in such a way that, during epitaxy, its edges create growth defects that propagate as far as the surface of the epitaxied layer () to provide a transferred guide mark () on the surface of the epitaxied layer () reproducing the shape of the initial guide mark () and in alignment with the initial guide mark.