The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Jun. 17, 2009
Applicant:

Kye-hee Yeom, Suwon-si, KR;

Inventor:

Kye-Hee Yeom, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor device having line type active regions and a method of fabricating the semiconductor device, the semiconductor device includes a device isolation layer which defines the line type active regions in a in a semiconductor substrate. Gate electrodes which are parallel to each other and intersect the line type active regions are disposed over the semiconductor substrate. Here, the gate electrodes include both a device gate electrode and a recessed device isolation gate electrode. Alternatively, each of the gate electrodes is constituted of a device gate electrode and a plan type device isolation gate electrode, and a width of the plan type device isolation gate electrode greater than a width of the device gate electrode.


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