The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Dec. 26, 2007
Sandrine Majcherczak, Saint Pierre d'Allevard, FR;
Carlo Tinella, Pavia, IT;
Olivier Richard, Coublevie, FR;
Andreia Cathelin, Laval, FR;
Sandrine Majcherczak, Saint Pierre d'Allevard, FR;
Carlo Tinella, Pavia, IT;
Olivier Richard, Coublevie, FR;
Andreia Cathelin, Laval, FR;
STMicroelectronics S. A., Montrouge, FR;
Abstract
A MOS transistor capable of withstanding significant currents, having doped areas corresponding to first and second main terminals of elementary MOS transistors and having, in top view, the shape of parallel strips separated by gate regions; first conductive elements which do not extend on the doped areas corresponding to the second main terminals and dividing into first fingers extending at least partly on the doped areas corresponding to the first main terminals and connected thereto; and second conductive elements which do not extend on the doped areas corresponding to the first main terminals and divide into second fingers extending at least partly on the doped areas corresponding to the second main terminals and connected thereto, the second fingers being at least partly intercalated with the first fingers.