The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Dec. 28, 2007
Hyung Suk Jung, Suwon-si, KR;
Jong-ho Lee, Suwon-si, KR;
Sung Kee Han, Seongnam-si, KR;
Ha Jin Lim, Seoul, KR;
Hyung Suk Jung, Suwon-si, KR;
Jong-Ho Lee, Suwon-si, KR;
Sung Kee Han, Seongnam-si, KR;
Ha Jin Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate insulating layer of the NMOS region, and a PMOS gate formed on the gate insulating layer of the PMOS region. Any one of the NMOS gate and the PMOS gate includes a one-layered conductive layer pattern, and another of the NMOS gate and the PMOS gate includes a three-layered conductive layer pattern.