The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Apr. 20, 2009
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, LaGrangeville, NY (US);
Jing Wang, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, LaGrangeville, NY (US);
Jing Wang, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal oxide semiconductor field effect transistor structure and a method for fabricating the metal oxide semiconductor field effect transistor structure provide for a halo region that is physically separated from a gate dielectric. The structure and the method also provide for a halo region aperture formed horizontally and crystallographically specifically within a channel region pedestal within the metal oxide semiconductor field effect transistor structure. The halo region aperture is filled with a halo region formed using an epitaxial method, thus the halo region may be formed physically separated from the gate dielectric. As a result, performance of the metal oxide semiconductor field effect transistor is enhanced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile