The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 31, 2007
Seung-hwan Song, Incheon, KR;
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
June-mo Koo, Seoul, KR;
Kyoung-iae Cho, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Sung-jae Byun, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
June-mo Koo, Seoul, KR;
Kyoung-Iae Cho, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Sung-jae Byun, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.