The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7829919 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 09, 2010

Filed:

Feb. 10, 2009
Applicant:

Hisao Kawasaki, Kanagawa-ken, JP;

Inventor:

Hisao Kawasaki, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device which can prevent peeling off of a gate electrode is provided. The semiconductor device has GaN buffer layerformed on substrate, undoped AlGaN layerformed on this buffer layer, drain electrodeand source electrodeformed separately on undoped AlGaN layer, which form ohmic junctions with undoped AlGaN layer. Between drain electrodeand source electrode, insulating layerwhich has openingis formed, and metal filmis formed on a surface of insulating layer. Gate electrodewhich forms a Schottky barrier junction with undoped AlGaN layeris formed in opening, and gate electrodeadheres to metal film


Find Patent Forward Citations

Kawasaki, Hisao. (2010). Semiconductor device (U.S. Patent No. 7829919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7829919

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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