The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Nov. 20, 2007
Tsunehiro Unno, Hitachi, JP;
Tsunehiro Unno, Hitachi, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
At an upper part of au AIGaInP based compound semiconductor layer including an active layersandwiched by a lower cladding layerand an upper cladding layer, a circular electrodefor wire bonding and cross-shaped branch electrodesfor current spreading connected to the circular electrodearc formed. A contact electrodefor current injection is connected to the branch electrodesfor current spreading. An interface contact electrodefor current injection is provided under the AIGaInP based compound semiconductor layer. A light reflection mirror layeris provided under the interface contact electrodefor current injection. The interface contact electrodefor current injection is provided right under an outer periphery of the electrodefor wire bonding or under a region in vicinity of the outer periphery of the electrodefor wire bonding.