The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Mar. 12, 2009
Applicants:

Kouichi Nagai, Kawasaki, JP;

Kaoru Saigoh, Kawasaki, JP;

Inventors:

Kouichi Nagai, Kawasaki, JP;

Kaoru Saigoh, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8242 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device has forming a capacitor having electrodes and a ferroelectric film provided therebetween above a substrate, forming a pad electrode electrically connected to one of the electrodes of the capacitor above the substrate, forming a protective film covering the pad electrode over the substrate, forming an opening in the protective film exposing at least a part of the pad electrode, bringing a measurement terminal into contact with the exposed surface of the pad electrode, etching the surface of the pad electrode after the measurement terminal is brought into contact therewith, and forming a hydrogen absorbing film on the protective film and the pad electrode exposed through the opening.


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