The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Oct. 24, 2008
Applicants:

Tae-whan Kim, Seoul, KR;

Jae-hun Jung, Seoul, KR;

Jae-won Shin, Daejeon, KR;

Jeong-yong Lee, Daejeon, KR;

Inventors:

Tae-Whan Kim, Seoul, KR;

Jae-Hun Jung, Seoul, KR;

Jae-Won Shin, Daejeon, KR;

Jeong-Yong Lee, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.


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