The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 17, 2006
Applicant:
Seung Woo Shin, Icheon-si, KR;
Inventor:
Seung Woo Shin, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a flash memory device is disclosed. A first oxide layer, a nitride layer, a second oxide layer, and a first polysilicon layer, which is a part of a polysilicon layer for a control gate, are formed to a predetermined thickness on a semiconductor substrate. A first etch process is performed to form gate patterns. An insulating layer is formed on the entire surface. A second etch process is implemented so that insulating layer spacers are formed on both sidewalls of each gate pattern while exposing the first polysilicon layer. A second polysilicon layer for the control gate is formed on the entire surface.