The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Feb. 10, 2009
Kevin Sean Matocha, Rexford, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Ramakrishna Rao, Bangalore, IN;
Peter Almern Losee, Rensselaer, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Ramakrishna Rao, Bangalore, IN;
Peter Almern Losee, Rensselaer, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A MOSFET device and a method for fabricating MOSFET devices are disclosed. The method includes providing a semiconductor device structure including a semiconductor device layer of a first conductivity type, and ion implanting a well structure of a second conductivity type in the semiconductor device layer, where the ion implanting includes providing a dopant concentration profile in a single mask implant sequence.