The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 11, 2007
Yi-kai Wang, Hsinchu, TW;
Liang-ying Huang, Taichung County, TW;
Tarng-shiang HU, Hsinchu, TW;
Yu-yuan Shen, Yunlin County, TW;
Yi-Kai Wang, Hsinchu, TW;
Liang-Ying Huang, Taichung County, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Yu-Yuan Shen, Yunlin County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.