The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Apr. 13, 2007
Applicants:

Yuichi Kuroki, Fujisawa, JP;

Yoshihiro Kurano, Fujisawa, JP;

Tomohiro Inoue, Fujisawa, JP;

Atsushi Oma, Yokohama, JP;

Yasuji Ogami, Yokohama, JP;

Kazuo Saito, Fujisawa, JP;

Inventors:

Yuichi Kuroki, Fujisawa, JP;

Yoshihiro Kurano, Fujisawa, JP;

Tomohiro Inoue, Fujisawa, JP;

Atsushi Oma, Yokohama, JP;

Yasuji Ogami, Yokohama, JP;

Kazuo Saito, Fujisawa, JP;

Assignees:

Nok Corporation, Tokyo, JP;

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 2/08 (2006.01); H01M 4/94 (2006.01); H01M 8/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to prevent an electrolyte membrane from being broken, and make an assembling steps of a cell easy, in a fuel cell provided with a membrane electrode complex in which catalyst layers are respectively arranged on both surfaces of a electrolyte membrane, first and second gas diffusion layers which are arranged on both surfaces of the electrode complex, separators for respectively supplying reaction gas to the first and second gas diffusion layers, and a gasket for sealing the reaction gas, the gasket is formed on a surface of the gas diffusion layer so as to oppose to the separator, at least the gasket forming portion of the gas diffusion layer has a lower void content than the portion in contact with the catalyst layer, and the gasket arranged in the first and second gas diffusion layers is integrally formed at least via a through hole passing through the first and second gas diffusion layers.


Find Patent Forward Citations

Loading…