The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Dec. 18, 2007
Jae Seung Choi, Icheon-si, KR;
Jae Seung Choi, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of correcting an optical proximity effect may include the steps of: fabricating a test mask having test patterns; projecting patterns on a wafer using the test mask; measuring line widths of the patterns formed on the wafer; and executing a model calibration using the measured line widths and writing a correction recipe. The entire area of the wafer chip may be divided into a plurality of templates. An optical proximity correction may be executed on one of the templates and it may be verified that the optical proximity correction was executed properly on another template. The data for the templates that pass a verification may be merged and final data may be written using the merged data. A photomask may be fabricated using the final data.