The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Sep. 05, 2007
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate, an n-type GaN layer, an n-type AlGaN cladding layer, a n-type GaN guide layer, an InGaN multiple quantum well active layer, an undoped-GaN guide layer, a p-type AlGaN electron overflow suppression layer, a p-type GaN guide layer, a SiOblocking layer, an Ni/ITO cladding layer electrodeas a transparent electrode, a Ti/Au pad electrode, and a Ti/Al/Ni/Au electrode. The SiOblocking layeris formed above the InGaN multiple quantum well active layerso as to have an opening. The Ni/ITO cladding layer electrodeis formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.