The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jan. 30, 2008
Harumi Nishiguchi, Tokyo, JP;
Hiromasu Matsuoka, Hyogo, JP;
Yasuyuki Nakagawa, Tokyo, JP;
Yasuhiro Kunitsugu, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Hiromasu Matsuoka, Hyogo, JP;
Yasuyuki Nakagawa, Tokyo, JP;
Yasuhiro Kunitsugu, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of AlO, and has a thickness smaller than λ/4n, wherein n is the refractive index of AlO, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.