The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

May. 16, 2008
Applicants:

Hiroaki Nakai, Tokyo, JP;

Hirotoshi Sato, Tokyo, JP;

Kiyoyasu Akai, Tokyo, JP;

Inventors:

Hiroaki Nakai, Tokyo, JP;

Hirotoshi Sato, Tokyo, JP;

Kiyoyasu Akai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an SRAM according to the present invention, an internal power supply voltage for a memory cell is applied to a back gate of each of P-channel MOS transistors included in an equalizer, a write driver, and a column select gate. Therefore, even if an internal power supply voltage for a peripheral circuit is shut off to reduce current consumption during standby, a threshold voltage of each of the P-channel MOS transistors is maintained at a high level, and hence a leakage current is small.


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