The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Mar. 24, 2008
Applicants:
Jian-gang Zhu, Pittsburgh, PA (US);
Yi Luo, Pittsburgh, PA (US);
Xin LI, Pittsburgh, PA (US);
Inventors:
Assignee:
Carnegie Mellon University, Pittsburgh, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.