The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Apr. 27, 2006
Masatomi Okanishi, Aizuwakamatsu, JP;
Masatomi Okanishi, Aizuwakamatsu, JP;
Spansion LLC, Sunnyvale, CA (US);
Abstract
There is provided a semiconductor device including a semiconductor substrate (), a high concentration diffusion region () formed within the semiconductor substrate (), a first low concentration diffusion region () that has a lower impurity concentration than the high concentration diffusion region () and is provided under the high concentration diffusion region (), and a bit line () that includes the high concentration diffusion region () and the first low concentration diffusion region () and serves as a source region and a drain region, and a manufacturing method therefor. Reduction of source-drain breakdown voltage of the transistor is suppressed, and a low-resistance bit line can be formed. Thus, a semiconductor device that can miniaturize memory cells and a manufacturing method therefor can be provided.