The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Feb. 22, 2007
Kiyofumi Nakaya, Saitama, JP;
Kiyofumi Nakaya, Saitama, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type silicon substrate. In the epitaxial layer, P type diffusion layers as a base region, N type diffusion layers as collector regions and an N type diffusion layer as an emitter region are formed. In this event, the P type diffusion layers are formed so as to have a double diffusion structure, and an impurity concentration in a surface of the base region and in a region adjacent thereto is set high. This structure enables improvement in high frequency characteristics and in a current amplification factor while maintaining breakdown voltage characteristics of an NPN transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile