The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Dec. 29, 2006
Hiroaki Ueno, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Hiroaki Ueno, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.