The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

Jun. 03, 2005
Applicants:

Akira Izumi, Kitakyushu, JP;

Masamichi Ishihara, Kitakyushu, JP;

Inventors:

Akira Izumi, Kitakyushu, JP;

Masamichi Ishihara, Kitakyushu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gas inlet is disposed in a lower portion of a reaction chamber, a copper substrate is disposed in an upper portion thereof, and a tungsten catalytic body heated to 1600° C. is disposed midway between the two. Ammonia gas introduced from the gas inlet is decomposed by the tungsten catalytic body, a chemical species generated by the decomposition reacts with a surface of the copper substrate, and reduces and removes a contaminant on the copper surface, and a CuN thin film is formed on the copper substrate surface. This CuN film has the action of a film which prevents the oxidation of copper. This CuN film is thermally decomposed and removed when heated to temperatures of not less than 300° C., leaving a clean copper surface behind.


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