The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Dec. 30, 2004
Yong-sun Sohn, Ichon-shi, KR;
Seung-woo Jin, Ichon-shi, KR;
Min-yong Lee, Ichon-shi, KR;
Kyoung-bong Rouh, Ichon-shi, KR;
Yong-Sun Sohn, Ichon-shi, KR;
Seung-Woo Jin, Ichon-shi, KR;
Min-Yong Lee, Ichon-shi, KR;
Kyoung-Bong Rouh, Ichon-shi, KR;
Hynix Semiconductor, Inc., Ichon-si, Kyoungki-do, KR;
Abstract
The present invention provides a method for implanting ions in a semiconductor device capable of compensating for a difference in threshold voltages between a central portion and edge portions of a substrate generated while performing uniform ion implantation to entire surfaces of a substrate and another method for fabricating a semiconductor device capable of improving distribution of transistor parameters inside a substrate by forming a nonuniform channel doping layer or by forming a nonuniform junction profile.