The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jun. 30, 2008
Min-gyu Sung, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Tae-kwon Lee, Ichon-shi, KR;
Won Kim, Ichon-shi, KR;
Kwan-yong Lim, Ichon-shi, KR;
Seung-ryong Lee, Ichon-shi, KR;
Min-Gyu Sung, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Tae-Kwon Lee, Ichon-shi, KR;
Won Kim, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Seung-Ryong Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.