The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jun. 27, 2008
Jin Yul Lee, Icheon-si, KR;
Jin Yul Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Provided are a semiconductor device with a channel of a FIN structure and a method for manufacturing the same. In the method, a device isolation layer defining an active region is formed on a semiconductor substrate. A recess trench with a first width is formed in the active region, and a trench with a second width larger than the first width is formed in the device isolation layer. The trench formed in the device isolation layer is filled with a capping layer. A cleaning process is performed on the recess trench to form a bottom protrusion of a FIN structure including a protrusion and a sidewall. Gate stacks filling the recess trench are formed. A landing plug, which is divided by the capping layer filling the trench, is formed between the gate stacks.