The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Nov. 13, 2007
Jong-hyun Choung, Hwaseong-si, KR;
Byeong-jin Lee, Yongin-si, KR;
Hong-sick Park, Suwon-si, KR;
Sun-young Hong, Yongin-si, KR;
Bong-kyun Kim, Incheon, KR;
Won-suk Shin, Yongin-si, KR;
Jong-hyun Choung, Hwaseong-si, KR;
Byeong-jin Lee, Yongin-si, KR;
Hong-sick Park, Suwon-si, KR;
Sun-young Hong, Yongin-si, KR;
Bong-kyun Kim, Incheon, KR;
Won-suk Shin, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.