The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

Jan. 29, 2008
Applicants:

Franco Mariani, Bad Abbach, DE;

Werner Kroeninger, Regensburg, DE;

Inventors:

Franco Mariani, Bad Abbach, DE;

Werner Kroeninger, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating an integrated circuit including forming a first trench in a rear side of a semiconductor wafer, wherein the first trench has a depth extending partially through a thickness of the semiconductor wafer, coating the rear side with a layer of coating material, including filling the first trench with the coating material, and forming a second trench in a front side of the semiconductor wafer, wherein the second trench is aligned with and has a width less than a width of the first trench, and wherein the second trench has a depth extending at least through a remaining portion of the semiconductor wafer so as to be in communication with the coating material filling the first trench.


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