The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Mar. 18, 2008
Applicants:
Thomas Happ, Pleasantville, NY (US);
Shoaib Zaidi, Poughkeepsie, NY (US);
Inventors:
Thomas Happ, Pleasantville, NY (US);
Shoaib Zaidi, Poughkeepsie, NY (US);
Assignee:
Qimonda AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
Happ, Thomas. (2010). Method of fabricating an integrated circuit having a memory including a low-k dielectric material (U.S. Patent No. 7824951). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7824951
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile