The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Apr. 17, 2009
Po Min Tu, Chiayi County, TW;
Shih Cheng Huang, Hsinchu, TW;
Wen Yu Lin, Taichung County, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Po Min Tu, Chiayi County, TW;
Shih Cheng Huang, Hsinchu, TW;
Wen Yu Lin, Taichung County, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Zhanjing Technology (Shen Zhen) Inc., Shenzhen, Guangdong Province, CN;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.